Process for the generation of metal-containing films

ABSTRACT

A process including bringing a solid substrate in contact with a compound of general formula (I), (II), (III), or (IV) in the gaseous statewhere A is NR2 or OR with R being an alkyl group, an alkenyl group, an aryl group, or a silyl group,E is NR or O,n is 0, 1 or 2, m is 0, 1 or 2, andR′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or a silyl group.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a U.S. National Phase application ofPCT/EP2018/075053, filed Sep. 17, 2018, which claims the benefit ofpriority to U.S. Provisional Patent Application 62/763,125, filed Dec.20, 2017, and which claims the benefit of priority to U.S. ProvisionalPatent Application 62/763,136, filed Mar. 7, 2018, the entire contentsof which are hereby incorporated by reference herein.

The present invention is in the field of processes for the generation ofinorganic metal-containing films on substrates, in particular atomiclayer deposition processes.

With the ongoing miniaturization, e.g. in the semiconductor industry,the need for thin inorganic films on substrates increases while therequirements on the quality of such films become stricter. Thin metalfilms serve different purposes such as barrier layers, conductingfeatures, or capping layers. Several methods for the generation of metalfilms are known. One of them is the deposition of film forming compoundsfrom the gaseous state on a substrate. In order to bring metal atomsinto the gaseous state at moderate temperatures, it is necessary toprovide volatile precursors, e.g. by complexation of the metals withsuitable ligands. These precursors need to be sufficiently stable forevaporation, but on the other hand they need to be reactive enough toreact with the surface of deposition.

EP 3 121 309 A1 discloses a process for depositing aluminum nitridefilms from tris(dialkylamino)aluminum precursors. However, the precursoris not stable enough for applications which require high quality films.

In order to convert deposited metal complexes to metal films, it isusually necessary to expose the deposited metal complex to a reducingagent. Typically, hydrogen gas is used to convert deposited metalcomplexes to metal films. While hydrogen works reasonably well asreducing agent for relatively noble metals like copper or silver, itdoes not yield satisfactory results for more electropositive metals suchas titanium or aluminum.

WO 2013/070 702 A1 discloses a process for depositing metal filmsemploying aluminum hydride which is coordinated by a diamine as reducingagent. While this reducing agent generally yields good results, for somedemanding applications, higher vapor pressures, stability and/orreduction potential is required.

It was therefore an object of the present invention to provide a processfor preparing inorganic metal-containing films having less impurity inthe film. The process materials should be easy to handle; in particular,it should be possible to vaporize them with as little decomposition aspossible. Further, the process material should not decompose at thedeposition surface under process conditions but at the same time itshould have enough reactivity to participate in the surface reaction.All reaction by-products should be volatile to avoid film contamination.In addition, it should be possible to adjust the process such that metalatoms in the process material are either volatile or are incorporated inthe film. Furthermore, the process should be versatile, so it can beapplied to produce a broad range of different metals includingelectropositive metal films. These objects were achieved by a processfor preparing inorganic metal-containing films comprising bringing asolid substrate in contact with a compound of general formula (I), (II),(III), or (IV) in the gaseous state

wherein A is NR₂ or OR with R being an alkyl group, an alkenyl group, anaryl group, or a silyl group,E is NR or O,n is 0, 1 or 2, m is 0, 1 or 2, andR′ is hydrogen, an alkyl group, an alkenyl group, an aryl group, or asilyl group.

Preferred embodiments of the present invention can be found in thedescription and the claims. Combinations of different embodiments fallwithin the scope of the present invention.

The process according to the present invention is suitable for preparinginorganic metal-containing films. Inorganic in the context of thepresent invention refers to materials which contain at least 5 wt.-% ofat least one metal or semimetal, preferably at least 10 wt.-%, morepreferably at least 20 wt.-%, in particular at least 30 wt.-%. Inorganicfilms typically contain carbon only in the form of a carbide phaseincluding mixed carbide phases such as nitride carbide phases. Thecarbon content of carbon which is not part of a carbide phase in aninorganic film is preferably less than 5 wt.-%, more preferable lessthan 1 wt.-%, in particular less than 0.2 wt.-%. Preferred examples ofinorganic metal-containing films are metal nitride films, metal carbidefilms, metal carbonitride films, metal alloy films, intermetalliccompound films or films containing mixtures thereof.

The film prepared by the process according to the present inventioncontains metal. It is possible that the film contains one metal or morethan one metal. Metals include Li, Be, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr,Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd,Ag, Cd, In, Sn, Sb, Te, Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy,Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os Ir, Pt, Au, Hg, Tl, Pb, Bi. As theprocess according to the present invention is versatile with regard tothe metal, the metal can be more electropositive than Cu, morepreferably more electropositive than Ni. In particular, themetal-containing compound contains Ti, Ta, Mn, Mo, W, Al, Co, Ga, Ge,Sb, or Te.

The solid substrate can be any solid material. These include for examplemetals, semimetals, oxides, nitrides, and polymers. It is also possiblethat the substrate is a mixture of different materials. Examples formetals are aluminum, steel, zinc, and copper. Examples for semimetalsare silicon, germanium, and gallium arsenide. Examples for oxides aresilicon dioxide, titanium dioxide, and zinc oxide. Examples for nitridesare silicon nitride, aluminum nitride, titanium nitride, and galliumnitride. Examples for polymers are polyethylene terephthalate (PET),polyethylene naphthalene-dicarboxylic acid (PEN), and polyamides.

The solid substrate can have any shape. These include sheet plates,films, fibers, particles of various sizes, and substrates with trenchesor other indentations. The solid substrate can be of any size. If thesolid substrate has a particle shape, the size of particles can rangefrom below 100 nm to several centimeters, preferably from 1 μm to 1 mm.In order to avoid particles or fibers to stick to each other while themetal-containing compound is deposited onto them, it is preferably tokeep them in motion. This can, for example, be achieved by stirring, byrotating drums, or by fluidized bed techniques.

According to the present invention the solid substrate is brought incontact with a compound of general formula (I), (II), (III), or (IV) inthe gaseous phase. R′ in the compound of general formula (I), (II),(III), or (IV) is hydrogen, an alkyl group, an alkenyl group, an arylgroup, or a silyl group, preferably hydrogen. The R′ can be the same ordifferent to each other. Preferably, all R′ are hydrogen.

An alkyl group can be linear or branched. Examples for a linear alkylgroup are methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, n-heptyl,n-octyl, n-nonyl, n-decyl. Examples for a branched alkyl group areiso-propyl, iso-butyl, sec-butyl, tert-butyl, 2-methyl-pentyl,neo-pentyl, 2-ethylhexyl, cyclopropyl, cyclohexyl, indanyl, norbornyl.Preferably, the alkyl group is a C₁ to C₈ alkyl group, more preferably aC₁ to C₆ alkyl group, in particular a C₁ to C₄ alkyl group, such asmethyl, ethyl, iso-propyl or tert-butyl.

An alkenyl group contains at least one carbon-carbon double bond. Thedouble bond can include the carbon atom with which R′ is bound to therest of the molecule, or it can be placed further away from the placewhere R′ is bound to the rest of the molecule. Alkenyl groups can belinear or branched. Examples for linear alkenyl groups in which thedouble bond includes the carbon atom with which R′ is bound to the restof the molecule include 1-ethenyl, 1-propenyl, 1-n-butenyl,1-n-pentenyl, 1-n-hexenyl, 1-n-heptenyl, 1-n-octenyl. Examples forlinear alkenyl groups in which the double bond is placed further awayfrom the place where R′ is bound to the rest of the molecule include1-n-propen-3-yl, 2-buten-1-yl, 1-buten-3-yl, 1-buten-4-yl, 1-hexen-6-yl.Examples for branched alkenyl groups in which the double bond includesthe carbon atom with which R′ is bound to the rest of the moleculeinclude 1-propen-2-yl, 1-n-buten-2-yl, 2-buten-2-yl, cyclopenten-1-yl,cyclohexen-1-yl. Examples for branched alkenyl groups in which thedouble bond is placed further away from the place where R′ is bound tothe rest of the molecule include 2-methyl-1-buten-4-yl,cyclopenten-3-yl, cyclohexene-3-yl. Examples for an alkenyl group withmore than one double bonds include 1,3-butadien-1-yl, 1,3-butadien-2-yl,cylopentadien-5-yl.

Aryl groups include aromatic hydrocarbons such as phenyl, naphthalyl,anthrancenyl, phenanthrenyl groups and heteroaromatic groups such aspyrryl, furanyl, thienyl, pyridinyl, quinoyl, benzofuryl,benzothiophenyl, thienothienyl. Several of these groups or combinationsof these groups are also possible like biphenyl, thienophenyl orfuranylthienyl. Aryl groups can be substituted for example by halogenslike fluoride, chloride, bromide, iodide; by pseudohalogens likecyanide, cyanate, thiocyanate; by alcohols; alkyl chains or alkoxychains. Aromatic hydrocarbons are preferred, phenyl is more preferred.

A silyl group is a silicon atom with typically three substituents.Preferably a silyl group has the formula SiX₃, wherein X is independentof each other hydrogen, an alkyl group, an aryl group or a silyl group.It is possible that all three X are the same or that two A are the sameand the remaining X is different or that all three X are different toeach other, preferably all X are the same. Alkyl and aryl groups are asdescribed above. Examples for silyl groups include SiH₃, methylsilyl,trimethylsilyl, triethylsilyl, tri-n-propylsilyl, tri-iso-propylsilyl,tricyclohexylsilyl, dimethyl-tert-butylsilyl, dimethylcyclohexylsilyl,methyl-di-iso-propylsilyl, triphenylsilyl, phenylsilyl,dimethylphenylsilyl, pentamethyldisilyl.

A in the compound of general formula (I), (II), (III), or (IV) is NR₂ orOR, i.e. a nitrogen atom bearing two substituents R or an oxygen atombearing one substituent R. R is an alkyl group, an alkenyl group, anaryl group, or a silyl group. The same definitions and preferredembodiments apply as for R′ described above unless expressly describeddifferently. Preferably, R is methyl, ethyl, tert-butyl ortrimethylsilyl. Also preferably, if A is NR₂ two R form together afive-membered ring including the nitrogen atom, in particular the two Rare a —CH₂—CH₂—CH₂—CH₂— group in the five-membered ring including thenitrogen atom.

E in the compound of general formula (II) or (III) is NR or O, i.e. anitrogen atom bearing one substituent R or an oxygen atom. Thedefinition for R is the same as for R in A.

The variable n can be 0, 1 or 2, the variable m can be 0, 1 or 2,preferably, n+m is 1, 2, 3 or 4, more preferably, n is 1 or 2 and m is 1or 2, even more preferably, n is 1 and m is 1 or n is 2 and m is 2.

It is possible that all R′ and R are separate substituents.Alternatively, it is possible that two R′ or two R or an R′ and an Rtogether form a ring, preferably a four to eight-membered ring, inparticular a five- or six-membered ring.

In the compound of general formula (I), n and m can be 1 such that thecompound of general formula (I) becomes one of the following generalformulae.

Preferred examples for the compound of general formula (Ia), (Ib), and(Ic) are shown below.

Some preferred examples of the compound of general formula (Ia) in whichtwo R′ form a ring together are shown below.

In the compound of general formula (I), n can be 2 and m can be 1 suchthat the compound of general formula (I) becomes one of the followinggeneral formulae.

Preferred examples for the compound of general formula (Id), (Ie), (If)and (Ig) are shown below.

In the compound of general formula (I), n and m can be 2 such that thecompound of general formula (I) becomes one of the following generalformulae.

Preferred examples for the compound of general formula (Ih), (Ii), and(Ij) are shown below.

In the compound of general formula (I), n can be 0 and m can be 1 suchthat the compound of general formula (I) becomes general formula (Ik).

A preferred example of the compound of general formula (Ik) is shownbelow.

In the compound of general formula (II), n and m can be 1 such that thecompound of general formula (II) becomes one of the following generalformulae.

Preferred examples for the compound of general formula (IIaa) to (IIah)are shown below.

In the compound of general formula (II), n can be 2 and m can be 1 suchthat the compound of general formula (II) becomes one of the followinggeneral formulae.

Preferred examples for the compound of general formula (IIba) to (IIbr)are shown below.

In the compound of general formula (I), n and m can be 2 such that thecompound of general formula (I) becomes one of the following generalformulae.

Preferred examples for the compound of general formula (IIca) to (IIch)are shown below.

In the compound of general formula (II), n can be 0 and m can be 1 or 2such that the compound of general formula (II) becomes one of thefollowing general formulae.

Preferred examples for the compound of general formula (IIda) to (IIdc)are shown below.

In the compound of general formula (III), n and m can be 1 such that thecompound of general formula (III) becomes one of the following generalformulae.

Preferred examples for the compound of general formula (IIIa) to (IIIf)are shown below.

In the compound of general formula (III), n can be 2 and m can be 1 suchthat the compound of general formula (III) becomes one of the followinggeneral formulae.

Preferred examples for the compound of general formula (IIIg) to (IIIo)are shown below.

In the compound of general formula (III), n and m can be 2 such that thecompound of general formula (III) becomes one of the following generalformulae.

Preferred examples for the compound of general formula (IIIp) to (IIIu)are shown below.

In the compound of general formula (III), n can be 0 and m can be 1 suchthat the compound of general formula (III) becomes general formula(IIIv).

In the compound of general formula (IV), n and m can be 1 such that thecompound of general formula (IV) becomes one of the following generalformulae.

Preferred examples for the compound of general formula (IVa) to (IVd)are shown below.

In the compound of general formula (IV), n can be 2 and m can be 1 suchthat the compound of general formula (IV) becomes one of the followinggeneral formulae.

Preferred examples for the compound of general formula (IVe) to (IVm)are shown below.

In the compound of general formula (IV), n and m can be 2 such that thecompound of general formula (IV) becomes one of the following generalformulae.

Preferred examples for the compound of general formula (IVn) to (IVo)are shown below.

In the compound of general formula (IV), n can be 0 and m can be 2 suchthat the compound of general formula (IV) becomes general formula (IVr).

A preferred example of the compound of general formula (IVr) is shownbelow.

Preferably, if E is NR or A is OR, R in NR or OR bears no hydrogen atomin the 1-position, i.e. R bears no hydrogen atom which is bonded to theatom which is bonded to the nitrogen or oxygen atom, which is thus inthe beta-position with regard to the aluminum atom. Examples are alkylgroup bearing two alkyl side groups in the 1-position, i.e.1,1-dialkylalkyl, such as tert-butyl, 1,1-dimethylpropyl; alkyl groupswith two halogens in the 1-position such as trifluoromethyl,trichloromethyl, 1,1-difluoroethyl; trialkylsilyl groups such astrimethylsilyl, triethylsilyl, dimethyltert-butylsilyl; aryl groups, inparticular phenyl or alkyl-substituted phenyl such as2,6-diisopropylphenyl, 2,4,6-triisopropylphenyl. Alkyl groups bearing nohydrogen atom in the 1-position are particularly preferred.

The compound of general formula (I), (II), (III), or (IV) preferably hasa molecular weight of not more than 1000 g/mol, more preferably not morethan 800 g/mol, even more preferably not more than 600 g/mol, inparticular not more than 500 g/mol.

Preferably, the compound of general formula (I), (II), (III), or (IV)has a melting point ranging from −80 to 125° C., preferably from −60 to80° C., even more preferably from −40 to 50° C., in particular from −20to 20° C. It is advantageous if the compound of general formula (I),(II), (III), or (IV) melts to give a clear liquid which remainsunchanged until a decomposition temperature.

Preferably, the compound of general formula (I), (II), (III), or (IV)has a decomposition temperature of at least 80° C., more preferably atleast 100° C., in particular at least 120° C., such as at least 150° C.Often, the decomposition temperature is not more than 250° C. Thecompound of general formula (I), (II), (III), or (IV) has a high vaporpressure. Preferably, the vapor pressure is at least 1 mbar at atemperature of 200° C., more preferably at 150° C., in particular at120° C. Usually, the temperature at which the vapor pressure is 1 mbaris at least 50° C.

The compound of general formula (I), (II), (III), or (IV) can besynthesized by reacting the organic ligand with LiAlH₄ or a mixture ofAlCl₃ and LiAlH₄ as for example disclosed by N. Emig et al. inOrganometallics, volume 17 (1998), pages 3599-3608 or by B. Luo et al.in Dalton Transactions, volume (2006), pages 4491-4498.

Ligands including their synthesis are disclosed for the compound ofgeneral formula (Ia) and (IIaa) by Luitjes et al. in SyntheticCommunications, volume 24 (1994), pages 2257-2261, for (Ib), (Ie), (If),and (IVk) in EP 1 642 880 A1, for (Ic) by Behloul et al. in Synthesis,volume 8 (2004), pages 1274-1280 for (Id) in U.S. Pat. No. 6,299,676,for (Ih) by Lin et al. in Catalysis Communication, volume 111 (2018),pages 64-69, for (Ii) by Hauser et al. in the Journal of the AmericanChemical Society, volume 68 (1946), pages 1544-1546, for (ID byUtermohlen et al. in the Journal of the American Chemical Society,volume 67 (1945), page 1505, for (Ik) Knier et al. in the Journal of theAmerican Chemical Society, volume 22 (1980), pages 6789-6798, for (flab)by Doege et al. in Pharmazie, volume 62 (2007), pages 174-178, for(IIac) in EP 3 216 786 A1, for (IIad) by Kuethe et al. in OrganicLetters, volume 5 (2003), pages 3975-3978, for (IIae) in EP 1 505 059A1, for (IIaf) by Heathcote et al. in Dalton Transactions, volume 13(2007), pages 1309-1315, for (flag) by Rattay in Pharmazie, volume 52(1997), pages 676-679, for (IIbb) and (IIcb) by Felfoldi et al. in ActaPhysica et Chemica, volume 26 (1980), pages 163-169, for (IIbd) in WO2013/060 944, for (IIIi) by Schloegl et al. in Monatshefte für Chemie,volume 95 (1964), pages 922-941, for (IIbk) by Lovett et al. in theJournal of Organic Chemistry, volume 56 (1991), pages 2755-2758, for(IIbr) by Okano et al, in Chemistry Letters, 1982, pages 977-980, for(IIch) by Dale et al. in Acta Chemica Scandinavica, volume 46 (1992),pages 278-282, for (IIda) Grunwald et al. in the Journal of the AmericanChemical Society, volume 107 (1985), pages 4710-4715, for (IIdb) Bartelset al. in European Journal of Inorganic Chemistry, volume 10 (2002),pages 2569-2586, for (IIdc) Bertini et al. in Heterocycles, volume 41(1995), pages 675-688, for (IIIa) by Tuladhar et al. in TetrahedronLetters, volume 33 (1992), pages 2203-2206, for (IIIb) by Yamamoto et alin Chemistry Letters, volume 52 (2013), pages 1559-1561, for (IIIc) byGe et al. in RSC Advances, volume 4 (2014), pages 43195-43203, for(IIId) by Yoshino et al. in Chemical Communications, volume 16 (2000),pages 1475-1476, for (IIIe) by Oku et al. in the Journal of the AmericanChemical Society, volume 126 (2004), pages 7368-7377, for (IIIf) byJadhav et al. in Tetrahedron Letters, volume 53 (2012), pages 5338-5342,for (IIIh) and (IIIq) by Jiang et al. in the Journal of MedicinalChemistry, volume 54 (2011), pages 320-330, for (IIIj) and (IIIr) byPowel et al. in Synthesis, volume 4 (1984), pages 338-340, for (IIIo) byHassannia et al. in Letters in Organic Chemistry, volume 6 (2009), pages478-480, for (IIu) by Buchanan et al. in the Canadian Journal ofChemistry, volume 78 (2000), pages 3163-321, for (IIIv) Balashov et al.in Russian Journal of Physical Chemistry, volume 71 (1997), pages1016-1019, for (IVc) by Lazarus et al. in Journal of the ChemicalSociety, Perkin Transactions 2: Physical Organic Chemistry, 1980, page373-379, for (IVd) by Nakajima et al. in Bulletin oft he ChemicalSociety of Japan, volume 34 (1961), pages 651-654, for (IVg) inDE2553137, for (IVh) by Korshunov et al. in Zhurnal OrganicheskoiKhimii, volume 11 (1969), page 1947-1952, for (IVr) in GB1178420.

The compound of general formula (I), (II), (III), or (IV) used in theprocess according to the present invention are used at high purity toachieve the best results. High purity means that the substance usedcontains at least 90 wt.-% metal-containing compound or compound ofgeneral formula (I), (II), (III), or (IV), preferably at least 95 wt.-%,more preferably at least 98 wt.-%, in particular at least 99 wt.-%. Thepurity can be determined by elemental analysis according to DIN 51721(Prüfung fester Brennstoffe—Bestimmung des Gehaltes an Kohlenstoff andWasserstoff-Verfahren nach Radmacher-Hoverath, August 2001).

The compound of general formula (I), (II), (III), or (IV) is brought incontact with the solid substrate from the gaseous state. It can bebrought into the gaseous state for example by heating them to elevatedtemperatures. In any case a temperature below the decompositiontemperature of the compound of general formula (I), (II), (III), or (IV)has to be chosen. The decomposition temperature is the temperature atwhich the pristine compound of general formula (I), (II), (III), or (IV)begins changing its chemical structure and composition. Preferably, theheating temperature ranges from 0° C. to 300° C., more preferably from10° C. to 250° C., even more preferably from 20° C. to 200° C., inparticular from 30° C. to 150° C.

Another way of bringing the compound of general formula (I), (II),(III), or (IV) into the gaseous state is direct liquid injection (DLI)as described for example in US 2009/0 226 612 A1. In this method thecompound of general formula (I), (II), (III), or (IV) is typicallydissolved in a solvent and sprayed in a carrier gas or vacuum. If thevapor pressure of the compound of general formula (I), (II), (III), or(IV) and the temperature are sufficiently high and the pressure issufficiently low the compound of general formula (I), (II), (III), or(IV) is brought into the gaseous state. Various solvents can be usedprovided that the compound of general formula (I), (II), (III), or (IV)shows sufficient solubility in that solvent such as at least 1 g/I,preferably at least 10 g/I, more preferably at least 100 g/I. Examplesfor these solvents are coordinating solvents such as tetrahydrofuran,dioxane, diethoxyethane, pyridine or non-coordinating solvents such ashexane, heptane, benzene, toluene, or xylene. Solvent mixtures are alsosuitable.

Alternatively, the compound of general formula (I), (II), (III), or (IV)can be brought into the gaseous state by direct liquid evaporation (DLE)as described for example by J. Yang et al. (Journal of MaterialsChemistry, 2015). In this method, the compound of general formula (I),(II), (III), or (IV) is mixed with a solvent, for example a hydrocarbonsuch as tetradecane, and heated below the boiling point of the solvent.By evaporation of the solvent, the compound of general formula (I),(II), (III), or (IV) is brought into the gaseous state. This method hasthe advantage that no particulate contaminants are formed on thesurface.

It is preferred to bring the compound of general formula (I), (II),(III), or (IV) into the gaseous state at decreased pressure. In thisway, the process can usually be performed at lower heating temperaturesleading to decreased decomposition of the compound of general formula(I), (II), (III), or (IV). It is also possible to use increased pressureto push the compound of general formula (I), (II), (III), or (IV) in thegaseous state towards the solid substrate. Often, an inert gas, such asnitrogen or argon, is used as carrier gas for this purpose. Preferably,the pressure is 10 bar to 10⁻⁷ mbar, more preferably 1 bar to 10⁻³ mbar,in particular 1 to 0.01 mbar, such as 0.1 mbar.

Preferably, the compound of general formula (I), (II), (III), or (IV)acts as reducing agent in the process. In this case, a metal-containingcompound is deposited from the gaseous state onto the solid substratebefore bringing it in contact with a compound of general formula (I),(II), (III), or (IV). The metal-containing compound is usually reducedto a metal, a metal nitride, a metal carbide, a metal carbonitride, ametal alloy, an intermetallic compound or mixtures thereof. Metal filmsin the context of the present invention are metal-containing films withhigh electrical conductivity, usually at least 10⁴ S/m, preferably atleast 10⁵ S/m, in particular at least 10⁶ S/m.

The compound of general formula (I), (II), (III), or (IV) has a lowtendency to form a permanent bond with the surface of the solidsubstrate with the deposited metal-containing compound. As a result, themetal-containing film hardly gets contaminated with the reactionby-products of the compound of general formula (I), (II), (III), or(IV). Preferably, the metal-containing film contains in sum less than 5weight-% nitrogen, more preferably less than 1 wt.-%, in particular lessthan 0.5 wt.-%, such as less than 0.2 wt.-%.

The metal-containing compound contains at least one metal atom. Metalsinclude Li, Be, Na, Mg, Al, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,Zn, Ga, Rb, Sr, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te,Cs, Ba, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf,Ta, W, Re, Os Ir, Pt, Au, Hg, Tl, Pb, Bi. As the process according tothe present invention is very versatile with regard to themetal-containing compound, the metal-containing compound can contain ametal which is more electropositive than Cu, more preferably moreelectropositive than Ni. In particular, the metal-containing compoundcontains Ti, Ta, Mn, Mo, W, Al, Co, Ge, Ga, Sb, or Te. It is possiblethat more than one metal-containing compound is deposited on thesurface, either simultaneously or consecutively. If more than onemetal-containing compound is deposited on a solid substrate it ispossible that all metal-containing compounds contain the same metal ordifferent ones, preferably they contain different metals.

Any metal-containing compound, which can be brought into the gaseousstate, is suitable. These compounds include metal alkyls such asdimethyl zinc, trimethylaluminum; metal alkoxylates such as tetramethoxysilicon, tetra-isopropoxy zirconium or tetra-iso-propoxy titanium; metalcyclopentadienyl complexes like pentamethylcyclopendienyl-trimethoxytitanium or di(ethylcycopentadienyl) manganese; metal carbenes such astris(neopentyl)neopentylidene tantalum or bisimidazolidinylidenruthenium chloride; metal halides such as aluminum trichloride, tantalumpentachloride, titanium tetrachloride, molybdenum pentachloride, ortungsten hexachloride; carbon monoxide complexes like hexacarbonylchromium or tetracarbonyl nickel; amine-derived complexes such asbis(tert-butylimino)bis(dimethylamido)molybdenum,bis(tertbutylimino)bis(dimethylamido)tungsten ortetrakis(dimethylamido)titanium; diketonate complexes such astris(acetylacetonato)aluminum orbis(2,2,6,6-tetramethyl-3,5-heptanedionato) manganese.

Further examples for metal-containing compounds are aluminumtris(2,2,6,6-tetramethyl-3,5-heptanedionate), triisobutylaluminum,trimethylaluminum, tris(dimethylamido)aluminum(III), triethylgallium,trimethylgallium, tris(dimethylamido)gallium(III),tetrakis(diethylamido)titanium(IV), tetrakis(dimethylamido)titanium(IV),tetrakis(ethylmethylamido)titanium(IV), titanium (IV)diisopropoxidebis(2,2,6,6-tetramethyl-3,5-heptanedionate), titanium(IV)isopropoxide, titanium tetrachloride, bis(cyclopentadienyl)vanadium(II),bis(ethylcyclopentadienyl)vanadium(II), vanadium(V) oxytriisopropoxide,bis(cyclopentadienyl)chromium(II),bis(pentamethylcyclopentadienyl)chromium(II), chromium(III)tris(2,2,6,6-tetramethyl-3,5-heptanedionate), copperbis(6,6,7,7,8,8,8-heptafluoror-2,2-dimethyl-3,5-octanedionate), copperbis(2,2,6,6-tetramethyl3,5-heptanedionate),bis(pentamethylcyclopentadienyl)manganese(II),bromopentacarbonylmanganese(I), cyclopentadienylmanganese(I)tricarbonyl, ethylcyclopentadienylmanagenese(I) tricarbonyl,managnese(0) carbonyl,[1,1′-bis(diphenylphosphino)ferrocene]tetracarbonylmolybdenum(0),bis(pentamethylcyclopentadienyl)iron(II), 1,1′-diethylferrocene,iron(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate), iron(0)pentacarbonyl, bis(cyclopentadienyl)cobalt(II),bis(ethylcyclopentadienyl)cobalt(II),bis(pentamethylcyclopentadienyl)cobalt(II),allyl(cyclopentadienyl)nickel(II), bis(cyclopentadienyl)nickel(II),bis(ethylcyclopentadienyl)nickel(II), bis(triphenylphosphine)nickel(II)dichloride, nickel(II) bis(2,2,6,6-tetramethyl-3,5-heptanedionate),tris[N,N-bis(trimethylsilyl)amide]yttrium,tris(butylcyclopentadienyl)yttrium(III),tris(cyclopentadienyl)yttrium(III), yttrium(III) tris(isopropoxide),yttrium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate),bis(cyclopentadienyl)niobium(IV) dichloride,bis(cyclopentadienyl)zirconium(IV) dihydride,dimethylbis(pentamethylcyclopentadienyl)zirconium(IV),tetrakis(diethylamido)zirconium(IV),tetrakis(dimethylamido)zirconium(IV),tetrakis(ethylmethylamido)zirconium(IV), zirconium(IV) 2-ethylhexanoate,zirconium tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionate),bis(tenbutylcyclopentadienyl) dimethylhafnium(IV),bis(trimethylsilyl)amidohafnium(IV) chloride,dimethylbis(cyclopentadienyl)hafnium(IV), hafnium(IV) tert-butoxide,tetrakis(diethylamido)hafnium(IV), tetrakis(dimethylamido)hafnium(IV),tetrakis(etmhylmethylamido)hafnium(IV),pentakis(dimethylamino)tantalum(V), tantalum(V) ethoxide,tris(diethylamido)(tert-butylimido)tantalum(V),bis(butylcyclopentadienyl)tungsten(IV) diiodide,bis(tert-butylimino)bis(tenbutylamino) tungsten,bis(tert-butylimino)bis(dimethylamino)tungsten(VI),bis(cyclopentadienyl)tungsten(IV) dichloride,bis(cyclopentadienyl)tungsten(IV) dihydride,bis(isopropylcyclopentadienyl)tungsten(IV) dihydride,cyclopentadienyltungsten(II) tricarbonyl hydride,tetracarbonyl(1,5-cyclooctadiene)tungsten(0), and triamminetungsten(IV)tricarbonyl, tungsten hexacarbonyl, bis(pentafluorophenyl)zinc,bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc(II), diethylzinc,diphenylzinc, trimethyl(methylcyclopentadienyl)platinum(IV),triethyl(methylcyclopentadienyl)platinum(IV),bis(cyclopentadienyl)magnesium(II),bis(pentamethylcyclopentadienyl)magnesium,(3-aminopropyl)triethoxysilane, N-sec-butyl(trimethylsilyl)amine,chloropentamethyldisilane, 1,2-dichlorotetramethyldisilane,1,3-diethyl-1,1,3,3-tetarmethyldisilazane,1,2-dimethyl-1,1,2,2-tetraphenyldisilane, dodecamethylcyclohexasilane,hexamethyldisilane, hexamethyldisilazane, methylsilane,2,4,6,8,10-pentamethylcyclopentasiloxane, pentamethyldisilane, silicontetrabromide, silicon tetrachloride, tetraethylsilane,2,4,6,8-tetramethylcyclotetrasiloxane, 1,1,2,2-tetramethyldisilane,tris(tert-butoxy)silanol, tris(tert-pentoxy)silanol, germanium(IV)fluoride, hexamethyldigermanium(IV), hexaphenyldigermanium(IV),tetramethylgermanium, tributylgermanium hydride, triphenylgermaniumhydride, bis[bis(trimethylsilyl)amino]tin(II), dibutyldiphenyltin,hexaphenylditin(IV), tetraallyltin, tetrakis(diethylamido)tin(IV),tetrakis(dimethylamido)tin(IV), tetramethyltin, tetravinyltin, tin(II)acetylactonate, trimethyl(phenylethylnyl)tin, and trimethyl(phenyl)tin,tri(ethyloxy)antimony(III), tri(butyloxy)antimony(III),((CH₃)₂N)₃SbGe(OC₂H₅)₄, tetramethylgermanium(IV),tetraethylgermanium(IV), tetra-n-butylgermanium(IV).

Metal halides are preferred, metal chlorides are more preferred, inparticular TiCl₄, TaCl₅, MoCl₅, WCl₅, WCl₆, AlCl₃, GaCl₃, GeCl₄, TeCl₄.It is preferred that the molecular weight of the metal-containingcompound is up to 1000 g/mol, more preferred up to 800 g/mol, inparticular up to 600 g/mol, such as up to 500 g/mol.

The process is preferably performed as atomic layer deposition (ALD)process comprising the sequence

(a) depositing a metal-containing compound from the gaseous state onto asolid substrate and

(b) bringing the solid substrate with the deposited metal-containingcompound in contact with a compound of general formula (I), (II), (III),or (IV). Preferably, the sequence comprising (a) and (b) is performed atleast twice, more preferably at least five times, even more preferablyat least 10 times, in particular at least 50 times. Often, the sequencecomprising (a) and (b) is performed not more than 1000 times.

Generally, it is preferred to purge the substrate and its surroundingapparatus with an inert gas each time the solid substrate is exposed tothe metal-containing compound or the compound of general formula (I),(II), (III), or (IV) in the gaseous state. Preferred examples for inertgases are nitrogen and argon. Purging can take 1 s to 1 min, preferably5 to 30 s, more preferably from 10 to 25 s, in particular 15 to 20 s.

Preferably, the temperature of the substrate is 5° C. to 40° C. higherthan the place where the metal-containing compound is brought into thegaseous state, for example 20° C. Preferably, the temperature of thesubstrate is from room temperature to 400° C., more preferably from 100to 300° C., such as 150 to 220° C.

Preferably, after deposition of a metal-containing compound on the solidsubstrate and before bringing the solid substrate with the depositedmetal-containing compound in contact with the compound of generalformula (I), (II), (III), or (IV), the solid substrate with thedeposited metal-containing compound is brought in contact with an acidin the gaseous phase. Without being bound by a theory, it is believedthat the protonation of the ligands of the metal-containing compoundfacilitates its decomposition and reduction. Suitable acids includehydrochloric acid and carboxylic acids, preferably, carboxylic acidssuch as formic acid, acetic acid, propionic acid, butyric acid, ortrifluoroacetic acid, in particular formic acid.

An example for the process of the present invention is a method ofdepositing a metal-containing film on a substrate, comprising:

(i) supplying a metal precursor vapor to a substrate to obtain a coatedsubstrate;

(ii) purging the coated substrate with a first carrier gas;

(iii) supplying an aluminum hydride co-reactant to the coated substrate;and then

(iv) purging with a second carrier gas,

wherein the aluminum hydride co-reactant is a metal complex, comprisingan aluminum hydride comprising 1 to 3 hydrogen atoms bonded to aluminum,and

wherein (i) to (iv) are optionally repeated one or more times. A metalprecursor generally is a metal-containing compound. The aluminum hydrideco-reactant is a compound of general formula (I), (II), (III), or (IV),preferably a compound of general formula (I), more preferably a compoundof general formula (Ia), even more preferably a compound of generalformula (Ia) wherein R′ is hydrogen, in particular a compound of generalformula (Ia) wherein R′ is hydrogen and R is methyl.

Alternatively, the process according to the present invention can serveto deposit aluminum from the compound of general formula (I), (II),(III), or (IV). In this case, the compound of general formula (I), (II),(III), or (IV) adsorbs to the surface of the solid substrate, forexample because there are reactive groups such as OH groups on thesurface of the solid substrate or the temperature of the solid substrateis sufficiently high. Preferably the adsorbed compound of generalformula (I), (II), (III), or (IV) is decomposed.

The decomposition can be effected in various ways. The temperature ofthe solid substrate can be increased above the decompositiontemperature. In this case, the process is a chemical vapor deposition(CVD) process. Typically, the solid substrate is heated to a temperaturein the range of 300 to 1000° C., preferably in the range of 350 to 600°C.

Furthermore, it is possible to expose the deposited compound of generalformula (I), (II), (III), or (IV) to a plasma like an oxygen plasma,hydrogen plasma, ammonia plasma, or nitrogen plasma; to oxidants likeoxygen, oxygen radicals, ozone, nitrous oxide (N₂O), nitric oxide (NO),nitrogendioxde (NO₂) or hydrogenperoxide; to ammonia or ammoniaderivatives for example tert-butylamine, iso-propylamine, dimethylamine,methylethylamine, or diethylamine; to hydrazine or hydrazine derivativeslike N,N-dimethylhydrazine; to solvents like water, alkanes, ortetrachlorocarbon; or to boron compound like borane. The choice dependson the chemical structure of the desired layer. For aluminum oxide, itis preferable to use oxidants, plasma or water, in particular oxygen,water, oxygen plasma or ozone. For aluminum, nitride, ammonia,hydrazine, hydrazine derivatives, nitrogen plasma or ammonia plasma arepreferred. For aluminum boride boron compounds are preferred. Foraluminum carbide, alkanes or tetrachlorocarbon are preferred. Foraluminum carbide nitride, mixtures including alkanes, tetrachlorocarbon,ammonia and/or hydrazine are preferred.

The process is preferably performed as atomic layer deposition (ALD)process comprising the sequence

(c) bringing a solid substrate in contact with a compound of generalformula (I), (II), (III), or (IV) and

(d) decomposing the adsorbed compound of general formula (I), (II),(III), or (IV). Preferably, the sequence comprising (c) and (d) isperformed at least twice, more preferably at least five times, even morepreferably at least 10 times, in particular at least 50 times. Often,the sequence comprising (c) and (d) is performed not more than 1000times.

In this case the temperature of the substrate is preferably 5° C. to 40°C. higher than the place where the metal-containing compound is broughtinto the gaseous state, for example 20° C. Preferably, the temperatureof the substrate is from room temperature to 400° C., more preferablyfrom 100 to 300° C., such as 150 to 220° C.

If the temperature of the substrate in the process according to thepresent invention is kept below the decomposition temperature of themetal-containing compound, typically a monolayer is deposited on thesolid substrate. Once a molecule of the metal-containing compound isdeposited on the solid substrate further deposition on top of it usuallybecomes less likely. Thus, the deposition of the metal-containingcompound on the solid substrate preferably represents a self-limitingprocess step. The typical layer thickness of a self-limiting depositionprocesses step is from 0.01 to 1 nm, preferably from 0.02 to 0.5 nm,more preferably from 0.03 to 0.4 nm, in particular from 0.05 to 0.2 nm.The layer thickness is typically measured by ellipsometry as describedin PAS 1022 DE (Referenzverfahren zur Bestimmung von optischen anddielektrischen Materialeigenschaften sowie der Schichtdicke dünnerSchichten mittels Ellipsometrie; February 2004).

The exposure of the substrate with the compound of general formula (I),(II), (III), or (IV) or the metal-containing compound can take frommilliseconds to several minutes, preferably from 0.1 second to 1 minute,in particular from 1 to 10 seconds. The longer the solid substrate at atemperature below the decomposition temperature of the compound ofgeneral formula (I), (II), (III), or (IV) or the metal-containingcompound is exposed to the compound of general formula (I), (II), (III),or (IV) or the metal-containing compound the more regular films formedwith less defects.

A particular advantage of the process according to the present inventionis that the compound of general formula (I), (II), (III), or (IV) isvery versatile, so the process parameters can be varied in a broadrange. Therefore, the process according to the present inventionincludes both a CVD process as well as an ALD process.

The process according to the present invention yields an inorganicmetal-containing film. A film can be only one monolayer of a metal or bethicker such as 0.1 nm to 1 μm, preferably 0.5 to 50 nm. A film cancontain defects like holes. These defects, however, generally constituteless than half of the surface area covered by the film. The filmpreferably has a very uniform film thickness which means that the filmthickness at different places on the substrate varies very little,usually less than 10%, preferably less than 5%. Furthermore, the film ispreferably a conformal film on the surface of the substrate. Suitablemethods to determine the film thickness and uniformity are XPS orellipsometry.

The film obtained by the process according to the present invention canbe used in an electronic element. Electronic elements can havestructural features of various sizes, for example from 1 nm to 100 μm,for example 10 nm, 14 nm or 22 nm. The process for forming the films forthe electronic elements is particularly well suited for very finestructures. Therefore, electronic elements with sizes below 1 μm arepreferred. Examples for electronic elements are field-effect transistors(FET), solar cells, light emitting diodes, sensors, or capacitors. Inoptical devices such as light emitting diodes or light sensors the filmobtained by the process according to the present invention serves toincrease the refractive index of the layer which reflects light.

Preferred electronic elements are transistors. Preferably the film actsas chemical barrier metal in a transistor. A chemical barrier metal is amaterial which reduces diffusion of adjacent layers while maintainingelectrical connectivity.

EXAMPLES Example 1a: Synthesis of[2-(dimethylamino)ethyl](2-methoxyethyl)amine

A mixture of 2-chloroethyl methyl ether (6.092 g, 0.063 mol),N,N-dimethylethylenediamine (19.382 g, 0.213 mol), and water (5 mL) wasrefluxed for 18 h in a 250 mL round bottomed flask. Hexane (15 mL) andwater (10 mL) were added to the resultant solution at ambienttemperature. The flask contents were transferred to a separatory funnel.The aqueous fraction was washed with hexane (14×15 mL) and the combinedorganic fractions were dried over anhydrous MgSO₄. The solvent wasevaporated under reduced pressure to yield an intense yellow oil (5.513g, 59.8% yield).

¹H NMR (400 MHz, C₆D₆, δ in ppm): 2.04 (s, 6H), 2.29 (t, 2H), 2.60 (t,2H), 2.71 (t, 2H), 3.09 (s, 3H), 3.32 (t, 2H). ¹H NMR (400 MHz, C₆D₆, δin ppm):

¹³C NMR (100 MHz, C₆D₆, δ in ppm): 45.91, 48.34, 50.35, 58.81, 60.08,73.15.

Example 1 b: Synthesis of AlH₂[CH₃OCH₂CH₂NCH₂CH₂NMe₂] (Ib-1)

A solution of AlCl₃ (0.788 g, 5.9 mmol) in 30 mL of diethyl ether wascannulated into a stirred solution of LiAlH₄ (0.708 g, 17.7 mmol) in 30mL of diethyl ether at 0° C. in an ice bath. The resultant cloudysolution was warmed to room temperature, stirred for 40 min andre-cooled to −30° C. Then, a solution of[2-(dimethylamino)ethyl](2-methoxyethyl)amine (3.458 g, 23.6 mmol) in 45mL of diethyl ether was added dropwise. The resultant mixture wasstirred at ambient temperature for 18 h and was then filtered through a2-cm plug of Celite on a coarse glass frit. The diethyl ether wasevaporated from the filtrate under reduced pressure to collect theintense yellow colored, oily product (2.745 g, 66.7% yield). The crudeproduct was purified by distillation at 74° C. under reduced pressureaffording a colorless oil (1.645 g, 40% yield).

¹H NMR (400 MHz, C₆D₆, δ in ppm): 2.12 (s, 6H), 2.33 (t, 2H), 2.90 (t,2H), 3.03 (t, 3H), 3.20 (s, 3H), 3.37 (t, 2H).

¹³C NMR (100 MHz, C₆D₆, δ in ppm): 45.51, 47.85, 49.29, 57.91, 60.73,74.19. IR: v_(AlH)/cm⁻¹ 1764.

Example 2: Synthesis of H₂Al[N(CH₂CH₂CH₂NMe₂)₂] (Ih-1)

A solution of AlCl₃ (0.690 g, 5.2 mmol) in 40 mL of diethyl ether wascannulated into a stirred solution of LiAlH₄ (0.621 g, 15.5 mmol) in 40mL of diethyl ether at 0° C. in an ice bath. The resulting cloudysolution was warmed to room temperature, stirred for 40 min, and thencooled to −30° C. At this point, a solution of3,3′-iminobis(N,N-dimethyl-propylamine) (4.003 g, 20.7 mmol) in 55 mL ofdiethyl ether was added dropwise. The resultant mixture stirred atambient temperature for 18 h and was then filtered through a 2-cm pad ofCelite on a coarse glass frit. The diethyl ether was evaporated from thefiltrate under reduced pressure to obtain a colorless, oily product(4.003 g, 91% yield). A portion of resultant product (2.043 g) wasdistilled at 65° C. under reduced pressure to afford a colorless oil(1.604 g, 79% yield).

¹H NMR (400 MHz, C₆D₆, δ in ppm): 1.51 (p, 4H), 2.17 (s, 12H), 2.36 (t,4H), 3.25 (t, 4H).

¹³C NMR (100 MHz, C₆D₆, δ in ppm): 28.61, 46.76, 57.77, 60.69. IR:v_(AlH)/cm⁻¹ 1691.

The invention claimed is:
 1. A process for preparing inorganicmetal-containing films comprising bringing a solid substrate in contactwith a compound of general formula (I), (II), (III), or (IV) in thegaseous state

wherein A is NR₂ or OR with R being an alkyl group, an alkenyl group, anaryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or2, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group,or a silyl group.
 2. The process according to claim 1, wherein R ismethyl, ethyl, tert-butyl, trimethylsilyl or two R form together a fivemembered ring and R′ is hydrogen.
 3. The process according to claim 1,wherein if E is NR or A is OR, R in NR or OR bears no hydrogen atom inthe 1-position.
 4. The process according to claim 1, wherein ametal-containing compound is deposited from the gaseous state onto thesolid substrate before bringing it in contact with a compound of generalformula (I), (II), (III), or (IV).
 5. The process according to claim 4,wherein the metal-containing compound contains Ti, Ta, Mn, Mo, W, Al,Co, Ga, Ge, Sb, or Te.
 6. The process according to claim 4, wherein themetal-containing compound is a metal halide.
 7. The process according toclaim 1, wherein the compound of general formula (I), (II), (III), or(IV) adsorbs to a surface of the solid substrate and the adsorbedcompound of general formula (I), (II), (III), or (IV) is decomposed. 8.The process according to claim 4, wherein the sequence containingbringing a solid substrate in contact with a compound of general formula(I), (II), (III), or (IV) and depositing a metal-containing compound isperformed at least twice.
 9. The process according to claim 1, whereinthe compound of general formula (I) has a molecular weight of not morethan 600 g/mol.
 10. The process according to claim 1, wherein thecompound of general formula (I) has a vapor pressure at least 1 mbar ata temperature of 200° C.
 11. A compound of general formula (I), (II),(III), or (IV)

wherein A is NR₂ or OR with R being an alkyl group, an alkenyl group, anaryl group, or a silyl group, E is NR or O, n is 0, 1 or 2, m is 0, 1 or2, and R′ is hydrogen, an alkyl group, an alkenyl group, an aryl group,or a silyl group wherein at least one E or A contains oxygen or n is 2or m is
 2. 12. The compound according to claim 11, wherein the compoundis a compound of general formula (Ib), (Ic), (Ih), or (Ij)


13. The compound according to claim 10, wherein R′ is hydrogen and R ismethyl, ethyl, tert-butyl or trimethylsilyl, or two R form together afive-membered ring.